Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)

Steven P. DenBaars; Archie L. Holmes Jr.; Mark E. Heimbuch

doi:10.1117/12.176613

1 June 1994 Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)

Steven P. DenBaars, Archie L. Holmes Jr., Mark E. Heimbuch

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176613
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Recent progress on the use of liquid organometallic sources for replacing the group V compressed gases looks particularly encouraging. We have grown both strained and unstrained In_xGa_1-xAs_yP_1-y/InP and In_0.53Ga_0.47As/InP quantum well materials and devices in a non-hydride metalorganic chemical vapor deposition (MOCVD) system using liquid group V sources, tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP). Very low threshold current strained InGaAsP/InP quantum well laser diodes have been grown using TBA and TBP for the first time. Single 90 angstrom InGaAsP quantum well lasers emitting at 1.55 micrometers displayed threshold current densities of 121 A/cm² for a 1.6% compressively strained SQW, and 249 A/cm² for an unstrained SQW at a cavity length of 3500 micrometers . Unstrained ternary (In_0.53Ga_0.47As) single quantum well laser diodes exhibited extremely low threshold current densities (Jth equals 220 A/cm² for broad area devices 3.5 mm in cavity length). These values indicate that TBA and TBP are viable replacements for the more hazardous compressed gases, arsine and phosphine.

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Steven P. DenBaars, Archie L. Holmes Jr., and Mark E. Heimbuch "Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176613

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