High-power, high-duty-cycle operation of monolithic two-dimensional surface-emitting diode laser arrays in the junction-down configuration

Michael Jansen; Szutsun Simon Ou; Jane J. Yang; Moshe Sergant; Cynthia A. Hess; Chan A. Tu; Phillip Hayashida; D. Bowier; Fernando D. Alvarez; George M. Harpole; Mark A. Emanuel

doi:10.1117/12.176600

1 June 1994 High-power, high-duty-cycle operation of monolithic two-dimensional surface-emitting diode laser arrays in the junction-down configuration

Michael Jansen, Szutsun Simon Ou, Jane J. Yang, Moshe Sergant, Cynthia A. Hess, Chan A. Tu, Phillip Hayashida, D. Bowier, Fernando D. Alvarez, George M. Harpole, Mark A. Emanuel

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176600
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

High-power, high-duty cycle and continuous wave operation of large-area monolithic 2D surface-emitting GaAlAs laser diode arrays mounted junction-down on microchannel heat exchangers have been demonstrated. Devices mounted don 2-mm-thick Cu heat spreaders were operated to peak output power densities of > 100 W/cm² at 35% duty cycles,a nd exhibited high power conversion efficiencies, and full width emission spectra of < 4nm. Arrays mounted on 1-mm-thick heat spreaders were operated under continuous wave operating condition to approximately equals 50 W/cm² power density levels. Silicon microchannel heat exchangers with a measured thermal resistance per unit are of 0.0324 degree(s)C cm²/W were used to removed up to 550 W/cm² of excess heat generated by the arrays.

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Michael Jansen, Szutsun Simon Ou, Jane J. Yang, Moshe Sergant, Cynthia A. Hess, Chan A. Tu, Phillip Hayashida, D. Bowier, Fernando D. Alvarez, George M. Harpole, and Mark A. Emanuel "High-power, high-duty-cycle operation of monolithic two-dimensional surface-emitting diode laser arrays in the junction-down configuration", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176600

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