Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

Hanmin Zhao; Michael H. MacDougal; Kushant Uppal; Newton C. Frateschi; Paul Daniel Dapkus; Sabeur Siala; Richard N. Nottenburg

doi:10.1117/12.176612

Translator Disclaimer

1 June 1994 Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

Hanmin Zhao, Michael H. MacDougal, Kushant Uppal, Newton C. Frateschi, Paul Daniel Dapkus, Sabeur Siala, Richard N. Nottenburg

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176612
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Low threshold current single quantum well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, an almost- buried heterostructure laser is made by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%). High reflection coated laser (95%/95%) has a cw threshold current as low as 0.28 mA.

Citation Download Citation

Hanmin Zhao, Michael H. MacDougal, Kushant Uppal, Newton C. Frateschi, Paul Daniel Dapkus, Sabeur Siala, and Richard N. Nottenburg "Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176612

ACCESS THE FULL ARTICLE