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1 June 1994 Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition
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Abstract
Low threshold current single quantum well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, an almost- buried heterostructure laser is made by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%). High reflection coated laser (95%/95%) has a cw threshold current as low as 0.28 mA.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hanmin Zhao, Michael H. MacDougal, Kushant Uppal, Newton C. Frateschi, Paul Daniel Dapkus, Sabeur Siala, and Richard N. Nottenburg "Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176612
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