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1 June 1994 Mode composition control in high-power buried InGaAsP/GaAs lasers
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We investigate high-power InGaAsP/GaAs (0.77 - 0.83 micrometers ) buried heterostructure lasers grown by LPE technique. A redistribution of the output power in the far field pattern from higher-order modes into the fundamental mode was observed with a temperature increase in the range of 10 degree(s) - 70 degree(s)C. A theoretical model taking into account the affect of boundary recombination velocity on the mesa walls on the carrier concentration profile in the active region is proposed. Significant rise of the boundary recombination velocity with temperature was confirmed experimentally by comparing the temperature dependences of quantum efficiency in buried and stripe-contact (without mesa walls) lasers fabricated from the same wafers. As a result of these investigations, we propose a new laser design in which the carrier concentration profile is similar to that in a heated device. A narrow contact mesa stripe laser permits us to concentrate most of the pumping current in the middle of active region and, hence, to increase the overlap of the carrier concentration profile with the fundamental mode intensity. The optimal dimensions for single-mode laser were calculated.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Misha Boroditsky, Dmitry Z. Garbuzov, Daniil A. Livshits, and Edward U. Rafailov "Mode composition control in high-power buried InGaAsP/GaAs lasers", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994);

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