Ultrahigh-average-brightness semiconductor laser arrays

Edmund L. Wolak; David C. Mundinger; D. Philip Worland; Gary L. Harnagel; Masamichi Sakamoto; Randall S. Geels; John G. Endriz

doi:10.1117/12.176617

1 June 1994 Ultrahigh-average-brightness semiconductor laser arrays

Edmund L. Wolak, David C. Mundinger, D. Philip Worland, Gary L. Harnagel, Masamichi Sakamoto, Randall S. Geels, John G. Endriz

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176617
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Methods of reformatting the output of laser diodes and maintaining much of their intrinsic brightness are discussed. A commercial, fiber-coupled package is shown with a symmetric etendue and a brightness of 15 kW/(cm² sr). A symmeterized beam with a brightness of 200 kW/(cm² sr) is demonstrated by using a combination of a micro-lensed diode array and a lens array.

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Edmund L. Wolak, David C. Mundinger, D. Philip Worland, Gary L. Harnagel, Masamichi Sakamoto, Randall S. Geels, and John G. Endriz "Ultrahigh-average-brightness semiconductor laser arrays", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176617

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