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2 May 1994 High-speed flip-chip p-i-n photodetector with integrated microlens
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Abstract
The design of high-speed, high responsivity PIN optical detectors for fiber optic telecommunication test equipment requires a very careful trade-off between lateral and vertical active area dimensions. A thin absorption layer (i-layer) leads to high bandwidth at the expense of responsivity. A large-area device improves light coupling efficiency from a fiber, but reduces the bandwidth. In addition, packaging constraints must be considered. Our approach attempts to optimize the end-system performance by incorporating an integral micro-lens which increases the effective light collection area; a double-pass illumination strategy that increases the bandwidth without sacrificing responsivity; and a micro-flip-chip die attachment technology that minimizes parasitic capacitance and inductance. An optical receiver composed of a GaAs MODFET-based transimpedance amplifier and a flip-chip PIN photodector exhibited a bandwidth of 7.2 GHz with an optical-to-electrical conversion gain of 560 V/W.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tun S. Tan, Christophe P. Kocot, Joseph Straznicky, Ronald T. Kaneshiro, and Forrest Kellert "High-speed flip-chip p-i-n photodetector with integrated microlens", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175273
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