Monolithic p-i-n-FET photoreceivers

Doyle T. Nichols; Niloy K. Dutta; Paul Raymond Berger; P. R. Smith; Deborah L. Sivco; Alfred Y. Cho

doi:10.1117/12.175283

2 May 1994 Monolithic p-i-n-FET photoreceivers

Doyle T. Nichols, Niloy K. Dutta, Paul Raymond Berger, P. R. Smith, Deborah L. Sivco, Alfred Y. Cho

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175283
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have investigated monolithic pin-FET photoreceivers in both the InP and GaAs systems. The GaAs-based circuits consisted of a single growth step in which the p-i-n diode was grown on top of the MESFET. The circuits exhibited flatband gains as high as 17 dB and bandwidths of 2.0 GHz. The InP circuits featured regrown MODFETs integrated with p-i-n diodes. These devices exhibited a gain of 17 dB and a bandwidth of 10 GHz.

Citation Download Citation

Doyle T. Nichols, Niloy K. Dutta, Paul Raymond Berger, P. R. Smith, Deborah L. Sivco, and Alfred Y. Cho "Monolithic p-i-n-FET photoreceivers", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175283

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