Fabrication and characteristics of rf magnetron-sputtered ITO thin films

Wen-Fa Wu; Bi-Shiou Chiou

doi:10.1117/12.175003

2 May 1994 Fabrication and characteristics of rf magnetron-sputtered ITO thin films

Wen-Fa Wu, Bi-Shiou Chiou

Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.175003
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Indium tin oxide (ITO) films have been deposited onto glass substrates by rf magnetron sputtering without in-situ substrate heating. The as-deposited films have an electrical resistivity of approximately 5 X 10^-4 (Omega) -cm, visible transmittance of about 85%, and IR reflectance of above 80% at 5 micrometers . The effect of sputtering parameters on the deposition rate and the electrical and optical properties of ITO films are investigated. Loss of transmittance or blackening for ITO films prepared at high sputtering power are observed and explored.

Citation Download Citation

Wen-Fa Wu and Bi-Shiou Chiou "Fabrication and characteristics of rf magnetron-sputtered ITO thin films", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.175003

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