Problems of the n-type diamond doping

Galina Popovici; Mark A. Prelas

doi:10.1117/12.171755

1 April 1994 Problems of the n-type diamond doping

Galina Popovici, Mark A. Prelas

Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171755
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

This paper is a review on would-be donor impurities in diamond lattice: N, P, Li, and Na. Other impurities like oxygen and sulfur are also discussed. As the solubility of donor impurities in the diamond lattice is predicted to be low, new methods of forcing the introduction of impurities into the diamond lattice are discussed. We propose a new method of electric-field-assisted diffusion and a method of increasing the sticking coefficient of the impurities by growth under electric bias. We also discuss the method of ion-assisted doping during growth proposed by a research group from SI Technologies.

Citation Download Citation

Galina Popovici and Mark A. Prelas "Problems of the n-type diamond doping", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); https://doi.org/10.1117/12.171755

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