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10 June 1994 Fabrication of high-performance GaAs/AlGaAs optical phase modulators for microwave/photonic integrated circuits
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Abstract
A high-speed distributed electrode phase modulator has been designed and fabricated. The processing of this device presented many challenges: (1) smooth rib waveguides etched to an accuracy of +/- 200angstroms; (2) polyimide planarization of 5micrometers step heights, with vias patterned as small as 1.6 micrometers ; (3) contact metalization with resistivities as low as 1 X 10-6(Omega) -cm2; (4) coplanar n and p gold contacts 2.5 micrometers thick, with a 0.5 micrometers gap between contacts; (5) ion- implantation to achieve both electrical and optical isolation. A brief description of how each of these processes have been accomplished will be presented. The epitaxial growth structure of this device will be discussed, including SEM cross-sections of the completed device.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanley H. Kravitz, G. Allen Vawter, Vincent M. Hietala, Morris Burt Snipes Jr., Marcelino G. Armendariz, Richard Franklin Carson, B. Eugene Hammons, and Ronald E. Leibenguth "Fabrication of high-performance GaAs/AlGaAs optical phase modulators for microwave/photonic integrated circuits", Proc. SPIE 2155, Optoelectronic Signal Processing for Phased-Array Antennas IV, (10 June 1994); https://doi.org/10.1117/12.177393
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