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7 May 1980 Area Array X-Ray Sensors
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980)
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
In this paper we describe the considerations necessary 1Dr the optimization of CCD area array sensors for x-rays in the 0.5-15KeV energy range. It is shown that a backside illuminated, unthinned (-10 mil thick) deep depletion mode CCD fabricated on a high resis-tivity substrate (-15 KΩ-cm) is best for imaging with this x-ray range. Preliminary data demonsttating the functionality of such an area array is presented. Line array test structures fabricated along with the area array indicate that transfer efficiency for this CCD was better than 0.9999 when operated at 80oK. A slit imaged in the backside illuminated mode gave image with a FWHM approximately 60μm. The full well capacity of a 60μm x 20μm pixel was approximately 5 x 10 charges. X-ray sensitivity was demonstrated using MnTc photons ( 5.9 KeV). Large leakage currents were encountered due to the deep depletion. However,one sigma uncertainty in signal caused by generation was -77 charges at 80oK.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. M. McCann, M. C. Peckerar, W. Mend, D. A. Schwartz, R. E. Griffiths, G. Polucci, and M. V. Zombeck "Area Array X-Ray Sensors", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980);

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