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1 May 1994 Simple model of electron-bombarded CCD gain
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Proceedings Volume 2172, Charge-Coupled Devices and Solid State Optical Sensors IV; (1994) https://doi.org/10.1117/12.172773
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States
Abstract
In earlier work, a model of the back illuminated CCD was presented and used to predict optical quantum efficiency. In this work we expand on the model and find an analytical solution for the probability of collection of a carrier generated at a given depth. We apply our solution to find the theoretical quantum efficiencies for both electron bombardment and optical illumination and compare them to measurements taken on thinned, backside-enhanced, non- AR coated devices. A single set of parameters is found which shows a reasonable fit to both sets of data. Earlier models of electron-bombarded CCDs have failed to explain the measured nonzero gain at low energies, however our model shows nonzero gain at all energies.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alice L. Reinheimer and Morley M. Blouke "Simple model of electron-bombarded CCD gain", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); https://doi.org/10.1117/12.172773
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