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13 May 1994 Cell projection electron-beam lithography
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Abstract
The HL-800D cell-projection e-beam lithography system was developed to meet the need for quarter-micron direct writing. It is the first commercially available cell projection system. Using the original HL-700 series concepts and Hitachi's more than 20 years of experience with HL-series manufacturing, most of the subsystems were redesigned. The HL-800D system has the following features for high-speed and accuracy: (1) a maximum beam size of 5 micrometers square with a current density of 10 A/cm2 at 50 kV acceleration; (2) a high- speed and high-accuracy, three-stage electron-beam deflection-control system; and (3) a continuous writing method to help eliminate stage-overhead time. The throughput of this system typically exceeds ten to fifteen wafers per hour for a quarter-micron pattern, though the speed depends on the total number of shots per wafer. This paper briefly describes the HL- 800D system, including its specifications, system performance data, and its potential for ULSI lithography.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norio Saitou and Yoshio Sakitani "Cell projection electron-beam lithography", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175811
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