High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

Matthew E. Hansen; Franco Cerrina

doi:10.1117/12.175831

13 May 1994 High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

Matthew E. Hansen, Franco Cerrina

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175831
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

A high-sensitivity holographic and interferometric metrology developed at the Center for X- ray Lithography (CXrL) has been employed to investigate in-plane distortions (IPD) produced in x-ray mask materials. This metrology has been applied to characterize damage to x-ray mask materials exposed to synchrotron radiation. X-ray mask damage and accelerated mask damage studies on silicon nitride and silicon carbide were conducted on the Aladdin ES-1 and ES-2 beamline exposure stations, respectively. Accumulated in-plane distortions due to x-ray irradiation were extracted from the incremental interferometric phase maps to yield IPD vs. dose curves for silicon nitride mask blanks. Silicon carbide mask blanks were subjected to accelerated mask damage in the high flux 2 mm X 2 mm beam of the ES-2 exposure station. An accelerated damage study of silicon carbide has shown no in-plane distortion for an accumulated dose of 800 kJ/cm² with a measurement sensitivity of less than 5 nm.

Citation Download Citation

Matthew E. Hansen and Franco Cerrina "High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175831

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KEYWORDS

X-rays

Photomasks

Silicon carbide

Holography

Silicon

Interferometry

Phase interferometry

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