Supporting early development of advanced high-performance logic with synchrotron orbital radiation lithography: a feasibility evaluation

Lars W. Liebmann; Andrew T.S. Pomerene; Daniel J. DeMay; Angela C. Lamberti; Thomas P. Donohue; Joachim N. Burghartz

doi:10.1117/12.175816

13 May 1994 Supporting early development of advanced high-performance logic with synchrotron orbital radiation lithography: a feasibility evaluation

Lars W. Liebmann, Andrew T.S. Pomerene, Daniel J. DeMay, Angela C. Lamberti, Thomas P. Donohue, Joachim N. Burghartz

Author Affiliations +

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175816
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The synchrotron x ray lithography (XRL) project described was conducted as a learning and feasibility vehicle for gate level lithography in support of IBM's most advanced CMOS logic programs. An electrically probable multilevel lithography test site was developed and characterized to exercise critical design, mask manufacture, alignment, exposure, and metrology issues in the 150 - 350 nm linewidth range. A fully capped silicided polysilicon gate stack was chosen for the electrical measurements in order to develop and demonstrate the XRL and related reactive ion etch process on a realistic, product-like substrate. This paper addresses test site design issues, elaborates on the mask manufacturing process, and presents SEM and electrical data from wafers processed at IBM's Advanced Semiconductor Technology Center. The data presented demonstrate the feasibility of supporting early device development and process integration with XRL and highlight the need for high resolution, defect free, proximity corrected masks to fully exploit the capabilities of x ray lithography.

Citation Download Citation

Lars W. Liebmann, Andrew T.S. Pomerene, Daniel J. DeMay, Angela C. Lamberti, Thomas P. Donohue, and Joachim N. Burghartz "Supporting early development of advanced high-performance logic with synchrotron orbital radiation lithography: a feasibility evaluation", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175816

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available