Design of a bottom antireflective layer for optical lithography

James T. Fahey; Wayne M. Moreau; Kevin M. Welsh; Steve S. Miura; Nicholas K. Eib; Gary T. Spinillo; John L. Sturtevant

doi:10.1117/12.175357

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16 May 1994 Design of a bottom antireflective layer for optical lithography

James T. Fahey, Wayne M. Moreau, Kevin M. Welsh, Steve S. Miura, Nicholas K. Eib, Gary T. Spinillo, John L. Sturtevant

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Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175357
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The advent of deep-UV(DUV), chemically amplified, acid catalyzed photoresists as successors to positive diazoquinones photoresists has brought about a new set of process environment concerns directed towards all materials in contact or absorbed by the photoresists. In addition to the application of DUV bottom anti-reflective coatings (BARCs) to suppress optical reflection and subsequent linewidth distortion, we must consider the properties and interaction of the BARC layer with the labile photoacid of the latent image. In this regard, we have examined the physico-chemical aspects of the DUV BARC with regards to acting as a barrier layer to substrate poisoning, and as an optical absorbing layer that does not interact and/or distort the deep-UV profile. Various single component polymeric BARCs were synthesized and examined. Considerations will be discussed of the optical absorbance, the coating quality, dry etch rate, and the impermeability of the BARC layer to photoacid diffusion to fulfill the performance requirements of BARCs for DUV lithography.

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James T. Fahey, Wayne M. Moreau, Kevin M. Welsh, Steve S. Miura, Nicholas K. Eib, Gary T. Spinillo, and John L. Sturtevant "Design of a bottom antireflective layer for optical lithography", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175357

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