Liquid phase silylation process for 248 nm lithography using EL IR photoresist

Guojing Zhang; Bruce W. Smith; Lynn F. Fuller

doi:10.1117/12.175365

16 May 1994 Liquid phase silylation process for 248-nm lithography using EL IR photoresist

Guojing Zhang, Bruce W. Smith, Lynn F. Fuller

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175365
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The goal of this investigation was to develop a 0.3 micron silylation process for 248 nm exposure, using a commercial photoresist material. Presented are results from investigation into liquid silylation of 248 nm exposure of Dynachem EL IR^TM, a non-melamine image reversal novalac material designed for i-line application. A GCA BOLD 0.42 NA, 248 nm excimer laser projection system was used for exposure. A process has been developed utilizing a silylation solution of hexamethyl- cyclotrisilazane (HMCTS), propylene-glycol-methyl-ether-acetate (PGMEA), and xylene mixtures. Using a 15 run Box-Behnken statistically designed experiment, dry development in 0₂ RIE has been optimized with chamber pressure, flow rate, and 0₂ flow as process factors. Process responses optimized were selectivity, etch rate, and anisotropy. Results show capabilities and sensitivities of the process. Response surfaces are presented, along with resist image results of 0.3 microns at 5:1 aspect ratio.

Citation Download Citation

Guojing Zhang, Bruce W. Smith, and Lynn F. Fuller "Liquid phase silylation process for 248-nm lithography using EL IR photoresist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175365

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