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16 May 1994 Plasma polymerized organosilane network polymers: high-performance resists for positive- and negative-tone deep-UV lithography
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Abstract
We recently introduced a new class of high performance deep-UV photoresists which are deposited via the gas phase plasma polymerization of methylsilane. These materials, particularly plasma polymerized methylsilane (PPMS), undergo efficient oxidation on exposure to deep-UV light in air to form a glasslike siloxane network polymer, providing patterns which may be developed and transferred into underlying substrates using all dry plasma etch processes. Here we describe a simple new procedure which affords the opposite (positive) tone image in the same resist using a wet buffered oxide etch to remove exposed regions. Lithographic performance studies (dose latitude as well as linearity data) are presented for both the negative tone and the new positive tone versions of the process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Olivier P. Joubert, Ajey M. Joshi, Timothy W. Weidman, J. T.C. Lee, and Gary N. Taylor "Plasma polymerized organosilane network polymers: high-performance resists for positive- and negative-tone deep-UV lithography", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175352
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