Relationship between physical properties and lithographic behavior in a high-resolution positive tone deep-UV resist

Ulrich P. Schaedeli; Norbert Muenzel; Heinz E. Holzwarth; Sydney G. Slater; Omkaram Nalamasu

doi:10.1117/12.175403

16 May 1994 Relationship between physical properties and lithographic behavior in a high-resolution positive-tone deep-UV resist

Ulrich P. Schaedeli, Norbert Muenzel, Heinz E. Holzwarth, Sydney G. Slater, Omkaram Nalamasu

Author Affiliations +

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175403
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

A chemically amplified positive tone resist system, based on new maleimide polymers and a photoacid generator, has been developed, called MISTRAL (Maleimide-Styrene based Resist for Advanced Lithography). These polymers, which are insoluble in aqueous base, consist of two different types of monomers: blocked p- hydroxystyrenes and N-substituted maleimides. In the irradiated zones of the resist film, the phenols are regenerated by the presence of a photoacid, thereby making the resist soluble in an appropriate developer. The maleimides, on the other hand, are needed to introduce high thermal stability and good film properties. The maleimides can further be used to tailor the dissolution properties of the resist. A variety of different MISTRAL polymers have been prepared, starting from the corresponding monomers. Changes in the molecular weight, the types of monomers used and their ratio in the feed have been analyzed: a correlation study between the physical properties of the MISTRAL polymers and their lithographic behavior was systematically performed, revealing quarter micron resolution capabilities.

Citation Download Citation

Ulrich P. Schaedeli, Norbert Muenzel, Heinz E. Holzwarth, Sydney G. Slater, and Omkaram Nalamasu "Relationship between physical properties and lithographic behavior in a high-resolution positive-tone deep-UV resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175403

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