Paper
16 May 1994 Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist
Kaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Jun-ichi Yano, Yukio Ogura, Etsuo Hasegawa
Author Affiliations +
Abstract
A novel photoacid generator, ALS (alkylsulfonium salt; cyclohexylmethyl(2-oxocyclohexyl)sulfonium trifluoromethane- sulfonate) for ArF excimer laser ((lambda) equals193 nm) lithography and a single-layer resist have been developed. ALS shows high transparency at 193 nm and photoacid generating capability on irradiation by ArF excimer laser. A novel methacrylate terpolymer, poly(tricyclo[5.2.1.02,6]decanylmethacrylate-co-2- tetrahydropyranylmethacrylate-co-methacrylic acid), is synthesized as a base resin. The resist, consisting of ALS and the polymer, shows chemical amplification and good resolution. A 0.2-micrometers line and space negative-tone image is observed at 15 mJ/cm2 dose using an ArF excimer laser.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Jun-ichi Yano, Yukio Ogura, and Etsuo Hasegawa "Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175336
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CITATIONS
Cited by 9 scholarly publications and 9 patents.
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KEYWORDS
Excimer lasers

Polymers

Lithography

Etching

Transparency

Ultraviolet radiation

Chemically amplified resists

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