Developed photoresist metrology using scatterometry

Michael R. Murnane; Christopher J. Raymond; Ziad R. Hatab; S. Sohail H. Naqvi; John Robert McNeil

doi:10.1117/12.174160

1 May 1994 Developed photoresist metrology using scatterometry

Michael R. Murnane, Christopher J. Raymond, Ziad R. Hatab, S. Sohail H. Naqvi, John Robert McNeil

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174160
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Scatterometry is shown to be a viable alternative to current methods of post-developed line shape metrology. Five wafers with focus-exposure matrices of line-space grating patterns in chemically amplified resist were generated. The gratings were illuminated with a He-Ne laser and, utilizing only the specular reflected order measured as a function of incident angle, we were able to predict linewidth and top and bottom rounded features. The scatterometry results were verified with those obtained from scanning electron microscopy (SEM). A set of wafers having a SRAM device pattern was analyzed. These wafers contain columns of devices, each having received an incremental exposure dose. We present exposure predictions based on data taken with the dome scatterometer, a novel device which measures all diffraction orders simultaneously by projecting them onto a diffuse hemispherical `dome.' A statistical calibration routine was used to train on the diffraction patterns from die locations with known exposure values.

Citation Download Citation

Michael R. Murnane, Christopher J. Raymond, Ziad R. Hatab, S. Sohail H. Naqvi, and John Robert McNeil "Developed photoresist metrology using scatterometry", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174160

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