On-line photolithography modeling using spectrophotometry and Prolith/2

Herbert L. Engstrom; Jeanne E. Beacham

doi:10.1117/12.174147

1 May 1994 On-line photolithography modeling using spectrophotometry and Prolith/2

Herbert L. Engstrom, Jeanne E. Beacham

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174147
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Spectrophotometry has been applied to optimizing photolithography processes in semiconductor manufacturing. For many years thin film measurement systems have been used in manufacturing for controlling film deposition processes. The combination of film thickness mapping with photolithography modeling has expanded the applications of this technology. Experimental measurements of dose-to-clear, the minimum light exposure dose required to fully develop a photoresist, are described. It is shown how dose-to-clear and photoresist contrast may be determined rapidly and conveniently from measurements of a dose exposure matrix on a monitor wafer. Such experimental measurements may underestimate the dose-to- clear because of thickness variations of the photoresist and underlying layers on the product wafer. Online modeling of the photolithographic process together with film thickness maps of the entire wafer can overcome this problem. Such modeling also provides maps of dose-to- clear and resist linewidth that can be used to estimate and optimize yield.

Citation Download Citation

Herbert L. Engstrom and Jeanne E. Beacham "On-line photolithography modeling using spectrophotometry and Prolith/2", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174147

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