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17 May 1994 Comparison of I-line and deep-UV technologies for 0.35-um lithography
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An experimental comparison of i-line lithography and deep-UV lithography was performed for 0.35 micrometers patterning of isolation level, polysilicon level, and the contact level. Both techniques used standard illumination and standard masks. The i-line process used conventional single level DNQ resists. The deep-UV work used a commercially available single level chemically amplified positive resist, with additional use of bottom-layer organic anti-reflective layers on some levels. The results highlighted the problems of pushing i-line lithography to the 0.35 micrometers regime and demonstrated the manufacturable process latitudes available with deep-UV lithography.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin J. Orvek, Joseph J. Ferrari, Sasha K. Dass, Daniel A. Corliss, James R. Buchanan, and MaryAnn Piasecki "Comparison of I-line and deep-UV technologies for 0.35-um lithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994);

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