Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs

Lars W. Liebmann; Thomas H. Newman; Richard A. Ferguson; Ronald M. Martino; Antoinette F. Molless; Mark O. Neisser; J. Tracy Weed

doi:10.1117/12.175455

17 May 1994 Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs

Lars W. Liebmann, Thomas H. Newman, Richard A. Ferguson, Ronald M. Martino, Antoinette F. Molless, Mark O. Neisser, J. Tracy Weed

Author Affiliations +

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175455
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

This paper presents a comparative analysis of binary `chrome-on-glass,' attenuated, biased rim, and phase edge shifted DUV lithography solutions for advanced circuitry in the sub-250 nm image size regime. Lithography techniques are compared based on design complexity, ground rule impact, process latitude, and cost. Data are presented from aerial image simulations (SPLAT), aerial image measurements (AIMS^R), and SEM measurements. Phase edge shifted designs clearly exhibit the largest process window for 200 nm linewidths exposed on a 0.5 NA 248 nm DUV stepper. The complexity of the mask engineering (design as well as manufacture) and exposure process for this `hard' phase shifting technique warrants the study of less powerful but also less restrictive phase shifting options. This paper investigates the tradeoffs associated with various applicable phase shift mask (PSM) techniques and presents recommendations based on specific program requirements.

Citation Download Citation

Lars W. Liebmann, Thomas H. Newman, Richard A. Ferguson, Ronald M. Martino, Antoinette F. Molless, Mark O. Neisser, and J. Tracy Weed "Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175455

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