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17 May 1994 Impact of attenuated mask topography on lithographic performance
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Abstract
Experimental evaluations were used in conjunction with rigorous electromagnetic simulations to evaluate the affect of attenuated phase-shifting mask (PSM) fabrication processes on lithographic performance. Three attenuated PSMs were fabricated including a normal leaky- chrome reticle and two novel approaches: a recessed leaky-chrome reticle for reduction of edge scattering and a single-layer reticle employing a hydrogenated amorphous carbon film. Direct aerial image measurements with the Aerial Image Measurement System (AIMSTM), exposures on an SVGL Micrascan 92 deep-UV stepper, and TEMPEST simulations were used to explore the effects of edge-scattering phenomena for the different mask topographies. For each reticle, the process window at a feature size of 0.25 micrometers was evaluated for four basic feature types: nested lines, isolated lines, isolated spaces, and contact holes. Further evaluation of the sidewall profiles and the image size on the mask are required to address these discrepancies.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Ferguson, William J. Adair, David S. O'Grady, Ronald M. Martino, Antoinette F. Molless, Brian J. Grenon, Alfred K. K. Wong, Lars W. Liebmann, Alessandro Callegari, Douglas C. LaTulipe, Donna M. Sprout, and Christopher M. Seguin "Impact of attenuated mask topography on lithographic performance", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175407
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