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1 June 1994 Characterization of a 4Kx2K three-side buttable CCD
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Abstract
Results are presented on the fabrication and characterization of a 4Kx2K three-side buttable CCD produced by Orbit Semiconductor, a silicon foundry in San Jose, California. This first run of wafers was produced to test the ability of Orbit to produce high quality scientific CCDs with the characteristics required for detectors to be used in optical instruments of the Keck Observatory. Also on the wafer are two 2Kx2K devices. Similar devices have been fabricated for us by Loral/Fairchild. Extensive characterization of the Loral devices has taken place over the past few years, so interest is high about the possibility that Orbit might become a second source for similar detectors. This paper presents the first results on the 4Kx2K CCDs, and those preliminary results include measurements of charge transfer efficiency, low-temperature dark current, on-chip amplifier read- out noise, localized charge traps, full well, and responsive quantum efficiency.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard J. Stover, William E. Brown, David Kirk Gilmore, and Mingzhi Wei "Characterization of a 4Kx2K three-side buttable CCD", Proc. SPIE 2198, Instrumentation in Astronomy VIII, (1 June 1994); https://doi.org/10.1117/12.176779
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