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1 June 1994 Delta-doped CCDs: high QE with long-term stability at UV and visible wavelengths
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Delta-doped CCDs, developed at JPL's Microdevices Laboratory, have achieved stable 100% internal quantum efficiency in the visible and near UV regions of the spectrum. In this approach, an epitaxial silicon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30% of a monolayer of boron atoms are deposited on the surface, followed by a 15 $angstrom silicon layer for surface passivation. The boron is nominally incorporated within a single atomic layer at the back surface of the device, resulting in the effective elimination of the backside potential well. The measured quantum efficiency is in good agreement with the theoretical limit imposed by reflection from the Si surface. Enhancement of the total quantum efficiency in the blue visible and near UV has been demonstrated by depositing antireflection coatings on the delta-doped CCD. Recent results on antireflection coatings and quantum efficiency measurements are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shouleh Nikzad, Michael E. Hoenk, Paula J. Grunthaner, Robert W. Terhune, Frank J. Grunthaner, Rusty Winzenread, Masoud M. Fattahi, Hsin-Fu Tseng, and Michael P. Lesser "Delta-doped CCDs: high QE with long-term stability at UV and visible wavelengths", Proc. SPIE 2198, Instrumentation in Astronomy VIII, (1 June 1994);


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