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1 June 1994 Quantum efficiency enhancement techniques for CCDs in the UV and near-IR bands
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Abstract
While large area scientific CCD imagers have high resolution and sensitivity in the visible region, the UV and near IR wavelength regions typically have a decreased response. Therefore, modified designs and advanced techniques are used to broaden the range for high quantum efficiency. For the UV band, deposition of a very thin polysilicon gate allows transmittance of shorter wavelength photons, and frontside coating a completed device with lumogen absorbs lower wavelength photons and re-emits them near the peak sensitivity of the CCD. For the near IR band, high-resisitivity, thick epitaxial material is used for collection of longer wavelength photons. Overall broad spectral band QE is enhanced with backside thinning and antireflective coatings of various dielectric layers. QE has been predicted by calculating the transmission, reflection, and absorption over a cross section of the CCD. Data is presented to confirm the QE increase from 120 to 1000 nm. Design and fabrication are discussed for each improvement technique, as well as trade-offs in cost, device performance, and yield.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jennifer A. Bishop, Edward A. Jakl, Jeff H. Pinter, and Richard A. Bredthauer "Quantum efficiency enhancement techniques for CCDs in the UV and near-IR bands", Proc. SPIE 2198, Instrumentation in Astronomy VIII, (1 June 1994); https://doi.org/10.1117/12.176778
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