Excimer laser induced photochemical defluorination and substitution of functional group onto fluororesin surface for adhesion

Masataka M. Murahara; Masayuki Okoshi; Koichi Toyoda

doi:10.1117/12.184765

7 September 1994 Excimer laser induced photochemical defluorination and substitution of functional group onto fluororesin surface for adhesion

Masataka M. Murahara, Masayuki Okoshi, Koichi Toyoda

Author Affiliations +

Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184765
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria

Abstract

A powerful adhesion of fluororesin (Teflon) featuring its excellent corrosion resistance and stainless steel was performed by using an epoxy resin-based bonding agent. Adhesion strength was 500 times more than that of untreated teflon, which has virtually no affinity with chemicals and solids. The teflon surface was irradiated by an ArF excimer laser light with energy higher than the carbon-fluorine bond, in a tetrahydroborate (BNaH4) and methyl alcohol (CH3OH) mixed solution ambient. The defluorination of the surface was performed with the boron atoms which were photodissociated from BNaH4. The fluorine atoms of the surface was replaced with the CH3 and OH radicals, also photo dissociated from CH3OH. The methyl(-CH3) and hydroxyl(-OH) groups, which have a good affinity with epoxy bonding agent, were substituted only for the area exposed to the laser light. The modified teflon surface was adhered to a stainless steel with the epoxy bonding agent, and shearing tensile strength test was performed. The strength was 100 Kgf/cm2, whereas untreated teflon's strength is 0.2 Kgf/cm2 or less. Thus the adhesion was improved considerably.

Citation Download Citation

Masataka M. Murahara, Masayuki Okoshi, and Koichi Toyoda "Excimer laser induced photochemical defluorination and substitution of functional group onto fluororesin surface for adhesion", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); https://doi.org/10.1117/12.184765

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