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High-contrast selective deposition of copper (Cu) and gold (Au) thin films using succeeding plating processes after the KrF excimer laser direct doping is described. Contrast ratio of selective deposition is estimated to be 108 for gallium arsenide (GaAs). As the properties of the deposition, resistivity of deposition and contact resistance to semiconductor are studied. A submicron line-pattern is formed by KrF excimer laser projection direct doping. Cu thin films are deposited selectively on the doped region by electroplating using a CuSO4 aqueous solution. For Au, the electroless plating using a commercial Au-24s solution has been carried out. The low specific contact resistance of 4.95 X 10-6 (Omega) cm2 between Au and GaAs which is 1/150 as small as that of the conventional alloyed contacts is achieved.
Koichi Toyoda,Koji Sugioka, andSatoshi Takeuchi
"High-contrast selective deposition of metal thin films and their properties as semiconductor contacts", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); https://doi.org/10.1117/12.184736
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Koichi Toyoda, Koji Sugioka, Satoshi Takeuchi, "High-contrast selective deposition of metal thin films and their properties as semiconductor contacts," Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); https://doi.org/10.1117/12.184736