Tradeoffs Between Uniformity, Selectivity And Pattern Fidelity In Plasma Etching

Marvin Hutt

doi:10.1117/12.958623

5 September 1980 Tradeoffs Between Uniformity, Selectivity And Pattern Fidelity In Plasma Etching

Marvin Hutt

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958623
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

A tutorial paper clearly defining plasma etch process requirement in the semiconductor industry. Defining pattern fidelity, lateral etch rate, anisotropy, photoresist integrity, etch uniformity and selectivity. Why etch uniformity independent of viscosity, power and pressure is needed to process VLSI circuits, and how etch uniformity is achieved. The bottom line as in all process requirements is a complete process with high yields. A discussion of the trade off requirements facing the process engineer today is also pre-sented. This will include the trade offs of selectivity versus photoresist integrity and pattern fidelity.

Citation Download Citation

Marvin Hutt "Tradeoffs Between Uniformity, Selectivity And Pattern Fidelity In Plasma Etching", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958623

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