High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays

Bernard Groussin; Francois Pitard; Gerard Volluet; Claude Carriere

doi:10.1117/12.188131

30 September 1994 High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays

Bernard Groussin, Francois Pitard, Gerard Volluet, Claude Carriere

Proceedings Volume 2210, Space Optics 1994: Space Instrumentation and Spacecraft Optics; (1994) https://doi.org/10.1117/12.188131
Event: Space Optics '94, 1994, Garmisch, Germany

Abstract

This paper describes recent progress in the development of more advance laser diode pump source: 'Monolithic Surface Emitting Laser Diode' (MOSEL). In this structure, the linear bar arrays are epitaxially grown on an engraved substrate between etched deflection mirrors adjacent to the laser facets. The laser diode structure grown by MOCVD technique is a single quantum well graded index active region (SQW/GRINSCH). A specific process has been designed to have cleaved laser diode facets. Monolithic elements of 0.1 cm² have been designed and mounted. The quasi-CW operation gives over 100 W of optical power or a QCW power density of 1 KW/cm². A compact assembly of 10 similar elements gives an optical power of 1 KW QCW. CW operation have been also tested up to 150 W CW/cm².

Citation Download Citation

Bernard Groussin, Francois Pitard, Gerard Volluet, and Claude Carriere "High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays", Proc. SPIE 2210, Space Optics 1994: Space Instrumentation and Spacecraft Optics, (30 September 1994); https://doi.org/10.1117/12.188131

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KEYWORDS

Semiconductor lasers

Mirrors

Chemical elements

Gallium arsenide

Metalorganic chemical vapor deposition

Near field optics

Continuous wave operation

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