Amplification of submillimeter radiation due to optical transitions between shallow acceptor states in semiconductors

Valery N. Shastin; Andrei V. Muravjov; Ekaterina E. Orlova; Sergei G. Pavlov

doi:10.1117/12.183061

Translator Disclaimer

19 August 1994 Amplification of submillimeter radiation due to optical transitions between shallow acceptor states in semiconductors

Valery N. Shastin, Andrei V. Muravjov, Ekaterina E. Orlova, Sergei G. Pavlov

Author Affiliations +

Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183061
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Theoretical proposals concerning submillimeter and far-infrared activity based on shallow acceptors states optical transitions in p-Ge and p-Si semiconductors are discussed. Preliminary experimental investigations will be presented.

Citation Download Citation

Valery N. Shastin, Andrei V. Muravjov, Ekaterina E. Orlova, and Sergei G. Pavlov "Amplification of submillimeter radiation due to optical transitions between shallow acceptor states in semiconductors", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.183061

ACCESS THE FULL ARTICLE