Paper
25 August 1994 Nonlinear electron-optical processes in asymmetric structures with quantum wells
Alexander A. Afonenko, Ivan S. Manak, Valerii K. Kononenko
Author Affiliations +
Proceedings Volume 2212, Linear and Nonlinear Integrated Optics; (1994) https://doi.org/10.1117/12.185156
Event: Integrated Optoelectronics '94, 1994, Lindau, Germany
Abstract
Theoretical consideration of lasing regimes of asymmetric semiconductor heterostructures has been made. The conditions for bistable power switching and periodical radiation pulsations have been determined. The efficiency of injection of current carriers into quantum wells has been investigated. Doping levels of the layers forming the asymmetric heterostructure and its band configuration to realize the request inhomogeneous excitation of the quantum wells have been defined. The asymmetric heterostructure waveguide properties have been considered and the optical confinement factor for various lasing modes has been established. Calculations have been performed for the GaAs-AlxGa1-xAs system.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Afonenko, Ivan S. Manak, and Valerii K. Kononenko "Nonlinear electron-optical processes in asymmetric structures with quantum wells", Proc. SPIE 2212, Linear and Nonlinear Integrated Optics, (25 August 1994); https://doi.org/10.1117/12.185156
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KEYWORDS
Quantum wells

Heterojunctions

Electrons

Refractive index

Quantum efficiency

Waveguides

Doping

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