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28 July 1994 Quantum well engineering for semiconductor integrated optical sensors
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Abstract
Semiconductor technology, when applied to the design and fabrication of integrated optical sensors, will yield structures of improved performance and reduced cost. Key advances in this area employ two quantum well-based effects, the quantum confined Stark effect and selective quantum well intermixing, the use of which enable the monolithic integration and enhanced functionality of semiconductor-based optical sensor circuits. In this paper, we discuss the application of these effects to the fabrication of semiconductor devices useful for integrated optical sensors based on waveguide interferometry. The quantum confined Stark effect allows us to electrically define the absorption edge of detectors and permits the fabrication of high- efficiency phase modulators. By the use of different surface dielectrics, quantum well intermixing is employed to generate transparent and absorbing regions on a single substrate. Current and future applications are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans P. Zappe, Daniel Hofstetter, and Hazel E.G. Arnot "Quantum well engineering for semiconductor integrated optical sensors", Proc. SPIE 2213, Nanofabrication Technologies and Device Integration, (28 July 1994); https://doi.org/10.1117/12.180963
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