Paper
3 June 1994 Characterization of strained-layer and asymmetrically coupled multiple-quantum-well electro-optic modulators
Michael J. Hayduk, Raymond K. Boncek, Steven T. Johns, Douglas A. Norton, Mark F. Krol, Brian P. McGinnis, Sergey Yu. Ten, Hyatt M. Gibbs, Galina Khitrova, Nasser Peyghambarian, Docai C. Sun, Elias Towe, Richard P. Leavitt, John T. Pham
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Abstract
Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 X 103 cm-1 for an applied electric field of 6.6 X 104 V/cm. These devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs were exhibited by these devices.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Hayduk, Raymond K. Boncek, Steven T. Johns, Douglas A. Norton, Mark F. Krol, Brian P. McGinnis, Sergey Yu. Ten, Hyatt M. Gibbs, Galina Khitrova, Nasser Peyghambarian, Docai C. Sun, Elias Towe, Richard P. Leavitt, and John T. Pham "Characterization of strained-layer and asymmetrically coupled multiple-quantum-well electro-optic modulators", Proc. SPIE 2216, Photonics at the Air Force Photonics Center, (3 June 1994); https://doi.org/10.1117/12.177340
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KEYWORDS
Gallium arsenide

Absorption

Polarization

Electrooptic modulators

Quantum wells

Diodes

Electro optics

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