Translator Disclaimer
Paper
22 July 1994 Delta-doped CCDs as stable, high-sensitivity, high-resolution UV imaging arrays
Author Affiliations +
Abstract
Delta-doped CCDs have achieved stable quantum efficiency, at the theoretical limit imposed by reflection from the Si surface in the near UV and visible. In this approach, an epitaxial silicon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30% of a monolayer of boron atoms are deposited nominally within a single atomic layer, resulting in the effective elimination of the backside potential well. These devices are highly uniform and have exhibited long-term stability. To achieve significantly higher total quantum efficiency, antireflection layers can be directly deposited on the device. This was demonstrated in the 250-400 nm region.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shouleh Nikzad, Michael E. Hoenk, Paula J. Grunthaner, Robert W. Terhune, Frank J. Grunthaner, Rusty Winzenread, Masoud M. Fattahi, and Hsin-Fu Tseng "Delta-doped CCDs as stable, high-sensitivity, high-resolution UV imaging arrays", Proc. SPIE 2217, Aerial Surveillance Sensing Including Obscured and Underground Object Detection, (22 July 1994); https://doi.org/10.1117/12.179949
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Delta doped CCDs high QE with long term stability...
Proceedings of SPIE (June 01 1994)
Thinned Backside Illuminated CCDs For Ultraviolet Imaging
Proceedings of SPIE (August 16 1988)
Backside Charging Of The CCD
Proceedings of SPIE (December 11 1985)
CCD's for High Resolution Imaging in the Near and Far...
Proceedings of SPIE (December 10 1986)
Low-energy electron detection with delta-doped CCDs
Proceedings of SPIE (April 25 1997)

Back to Top