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15 July 1994 Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy
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Abstract
Deep levels in p+n Hg0.73Cd0.27Te/Hg0.68Cd0.32Te planar heterostructure diodes, grown by molecular beam epitaxy on CdZnTe wafers, were studied using deep level transient spectroscopy (DLTS). The DLTS spectra showed the presence of at least two hole traps with activation energies close to midgap. The activation energy obtained from the Arrhenius plots showed a strong dependence on the aplied bias, making it difficult to obtain a precise value.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose E. Colon, Samuel Lakeou, Jagmohan Bajaj, Jose M. Arias, Majid Zandian, and John G. Pasko "Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179700
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