Reliability of oxides at low temperatures

William J. Vigrass

doi:10.1117/12.178489

23 June 1994 Reliability of oxides at low temperatures

William J. Vigrass

Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178489
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

The increased interest in cryogenic semiconductors and new cryogenic processes that operate at 40 K has prompted the development of a tester to analyze low temperature reliability physics. This tester is particularly suited to study hot electron (hot e-) effects at LN₂ temperatures but also capable of performing time dependent dielectric breakdown studies. The objective of this work was to study hot electron effects at low temperatures and its activation energy over a large temperature range for conventional thermal oxides in the 150 to 200 angstroms range. It has been shown over the last several years that low temperature operation can significantly enhance the hot electron degradation of a transistor.

Citation Download Citation

William J. Vigrass "Reliability of oxides at low temperatures", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178489

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available