Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors

Jose M. Arias; John G. Pasko; Majid Zandian; Jagmohan Bajaj; Lester J. Kozlowski; Roger E. DeWames; William E. Tennant

doi:10.1117/12.179662

13 July 1994 Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors

Jose M. Arias, John G. Pasko, Majid Zandian, Jagmohan Bajaj, Lester J. Kozlowski, Roger E. DeWames, William E. Tennant

Author Affiliations +

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179662
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out by growing material for operation in the following cut-off wavelength ((lambda) _co) ranges of interest: LWIR [(lambda) _co(77 K) equals 9-11 micrometers ], MLWIR [(lambda) _co(77 K) equals 6-7 micrometers ], and VLWIR [(lambda) _co(40 K) equals 20 micrometers ]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion-limited down to 80 K, 50 K, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the R_oA device values were uniform for the three band gap ranges when operating under diffusion limited conditions. The planar MBE HgCdTe technology has been further validated with the successful fabrication and operation of 64 X 64 hybrid FPAs.

Citation Download Citation

Jose M. Arias, John G. Pasko, Majid Zandian, Jagmohan Bajaj, Lester J. Kozlowski, Roger E. DeWames, and William E. Tennant "Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179662

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available