Translator Disclaimer
Paper
13 July 1994 Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors
Author Affiliations +
Abstract
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out by growing material for operation in the following cut-off wavelength ((lambda) co) ranges of interest: LWIR [(lambda) co(77 K) equals 9-11 micrometers ], MLWIR [(lambda) co(77 K) equals 6-7 micrometers ], and VLWIR [(lambda) co(40 K) equals 20 micrometers ]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion-limited down to 80 K, 50 K, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the RoA device values were uniform for the three band gap ranges when operating under diffusion limited conditions. The planar MBE HgCdTe technology has been further validated with the successful fabrication and operation of 64 X 64 hybrid FPAs.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose M. Arias, John G. Pasko, Majid Zandian, Jagmohan Bajaj, Lester J. Kozlowski, Roger E. DeWames, and William E. Tennant "Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179662
PROCEEDINGS
15 PAGES


SHARE
Advertisement
Advertisement
Back to Top