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13 July 1994 Spectroscopic ellipsometry as a real-time sensor for the fabrication of infrared photodiodes
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The use of in situ process monitoring equipment is becoming increasingly important in the drive to produce focal plan arrays more efficiently and at decreased cost. As part of Texas Instruments' modular approach to microelectronics manufacturing (microelectronics manufacturing science and technology, MMST), a number of internal process monitors and sensors have been developed. We describe the use of one such sensor, a spectral ellipsometer (SE) for in situ, real-time monitoring and control during infrared device fabrication. Using the SE we have demonstrated end-point detection for the removal of the air-contaminated surface layer of HgCdTe during a remote microwave hydrogen plasma cleanup process step. The SE is also being used to monitor the real-time growth of an interlevel MOCVD ZnS insulator. The spectral ellipsometer provides rapid feedback of film thickness, at a rate of about 10 Hz, enabling its use for process control. We describe the use of the SE for both the HgCdTe surface plasma etch cleanup and the ZnS deposition processes.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patricia B. Smith "Spectroscopic ellipsometry as a real-time sensor for the fabrication of infrared photodiodes", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994);

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