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9 November 1994 New type of thin film color image sensor
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Proceedings Volume 2247, Sensors and Control for Automation; (1994)
Event: Optics for Productivity in Manufacturing, 1994, Frankfurt, Germany
A new thin film color sensor array has been developed. In this device a single pixel consists of a combination of an amorphous silicon nipin detector and a crystalline operational amplifier. The carrier transport mechanisms of the diode under dark conditions as well as steady state opto electronic behavior of the nipin structure have been studied in theory and experiment in order to optimize the design of the image sensor. As a result, nipin structures with excellent dynamic range and linearity have been fabricated. Our study has also demonstrated that a three color detector can be obtained either by optimization of the design of the detector or by appropriate signal processing. The limitations arising from the design rules of the crystalline electronics for a single channel MOSFET process and their impact on readout performance and signal distortion are discussed. A novel two stage operational amplifier with optimized design and layout has been fabricated. Because of the superior performance of the amplifier and the diode this sensor is especially suitable for high sensitive color image processing applications.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi Zhu, Helmut Stiebig, Peter Rieve, Juergen Giehl, Michael Sommer, and Markus Boehm "New type of thin film color image sensor", Proc. SPIE 2247, Sensors and Control for Automation, (9 November 1994);


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