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6 August 1980 Measurement Of Noise Sources In P-Surface Channel Charge Coupled Device (CCD) Multiplexers For Infrared Focal Plane Arrays
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Proceedings Volume 0225, Infrared Image Sensor Technology; (1980) https://doi.org/10.1117/12.958714
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States
Abstract
The noise performance of a 32 channel p-surface channel CSD multiplexer for an infrared focal plane array was measured at room temperature and at 160 K. Theoretical calculations were made of the contributions from kTC noise, dark current noise, and interface state trapping noise. The calculated results agree well with the experimental values. The noise of the on-chip source follower output stage was below the 900 rms holes noise floor established for the measuring system by the sample and hold. The calibration of the equipment was checked by comparing the theoretical and measured noise values for optically injected charge carriers. The agreement was better than 10%. We measured 1 to 2 times theoretical kTC noise with the potential equilibration input. The design goal for these devices was a temp3ral noise voltage of 15 µV (3500 rms noise holes) referenced to the input. Cooled to 160 K we measured a noise voltage of 16 µV (3750 rms noise holeq referenced to the input. The spatial or fixed pattern noise was much larger: 12 mV (2.9x10 rms noise holes) referenced to the input.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. C. Jenkins, J. M. Killiany, and J. A. Modolo "Measurement Of Noise Sources In P-Surface Channel Charge Coupled Device (CCD) Multiplexers For Infrared Focal Plane Arrays", Proc. SPIE 0225, Infrared Image Sensor Technology, (6 August 1980); https://doi.org/10.1117/12.958714
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