Frequency tripling of high power far infrared radiation in silicon time-resolved measurements

M. Urban

doi:10.1117/12.2303099

1 January 1994 Frequency tripling of high power far infrared radiation in silicon time-resolved measurements

M. Urban

Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22502A (1994) https://doi.org/10.1117/12.2303099
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

In the Far Infrared Regime ( FIR ) the linear as well as the nonlinear optical properties of semiconductors are mainly determined by the motion of free carriers ( i.e. electrons in the conduction band for n-doped materials ) caused by the electric field of the incident wave. The measurement of nonlinear optical properties in the FIR thus provides the possibility to investigate nonlinearities of the free electron system, namely the nonparabolicity of the conduction band an the velocity dependance of the scattering time [1]. Since the free electron system is symmetric in space, the tripled frequency is the lowest order harmonic to be generated. The time resolved frequency tripling experiments with high power laser radiation, presented here, are of practical interest for the development of an efficient frequency converter for the FIR. With the availability of an efficient frequency upconversion, powerful microwave sources like gyrotrons could find an application in tokamak plasma diagnostics [2].

Citation Download Citation

M. Urban "Frequency tripling of high power far infrared radiation in silicon time-resolved measurements", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22502A (1 January 1994); https://doi.org/10.1117/12.2303099

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