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4 November 1994 Application of ion-assisted deposition using a gridless end-Hall ion source for volume manufacturing of thin film optical filters
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192111
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
A wide variety of thin-film materials (TiO2, SiO2, Al2O3, HfO2, Ta2O5, ITO, Y2O3, CeO2, Si3N4, ZrO2, Au, Ag, and MgF2) were deposited using conventional electron beam and thermal evaporation techniques with a concomitant bombardment of energetic oxygen ions from a gridless end-Hall ion source. The oxygen-ion-assisted deposition was performed with an ion-beam current of approximately one Ampere over a range of 40 to 120 eV, providing a uniform ion current density (.3 to .5 mA/cm2) impinging on a large substrate area (5024 cm2). Compared to film deposited using standard gridded ion sources this process produces optically equivalent materials with a broad ion beam which is well suited for volume manufacturing.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael L. Fulton "Application of ion-assisted deposition using a gridless end-Hall ion source for volume manufacturing of thin film optical filters", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); https://doi.org/10.1117/12.192111
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