Residual stresses in silicon dioxide thin films prepared by reactive electron beam evaporation

Herve Leplan; Bernard Geenen; Jean-Yves Robic; Y. Pauleau

doi:10.1117/12.192068

4 November 1994 Residual stresses in silicon dioxide thin films prepared by reactive electron beam evaporation

Herve Leplan, Bernard Geenen, Jean-Yves Robic, Y. Pauleau

Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192068
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France

Abstract

In this study, residual stresses and optical properties of SiO₂ films prepared by reactive electron gun evaporation have been investigated as a function of process parameters. The purpose of this work was to find process conditions resulting in SiO₂ stress free films or in a stress level balancing the high index material stress in a multilayer structure. We have found that stress in SiO₂ films becomes more compressive with conditions resulting in denser coatings (such as high substrate temperatures or low gas pressures). Using an in situ measurement technique, stress stabilities of these films were also studied under vacuum or heated environments. These experiences have confirmed the porous structure of evaporated coatings and have underlined the great importance of water in their final state of stress.

Citation Download Citation

Herve Leplan, Bernard Geenen, Jean-Yves Robic, and Y. Pauleau "Residual stresses in silicon dioxide thin films prepared by reactive electron beam evaporation", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); https://doi.org/10.1117/12.192068

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