Paper
4 November 1994 Temperature stability of thin film narrow bandpass filters produced by ion-assisted deposition
Haruo Takahashi
Author Affiliations +
Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192086
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
Four types of single-cavity thin-film narrow bandpass filters whose FWHM range from 0.5 to 1.1 nm are produced by ion-assisted deposition of alternating TiO2/SiO2 or Ta2O5/SiO2 layers onto eight substrates having differing coefficients of linear expansion, and the temperature stability of their center wavelengths are examined in the 1540-nm wavelength region. For the eight substrates, whose coefficients of linear expansion range from 0 to 142 X 10-7/ degree(s)C, the temperature stability of the filters ranges from +0.018 to -0.005 nm/ degree(s)C. Calculations based on a newly developed elastic strain model reveal the main reason temperature stability of the center wavelengths exhibits substrate dependency is due to a reduction in film packing density brought about by volumetric distortion of the film, which is caused by stress induced from the substrate.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haruo Takahashi "Temperature stability of thin film narrow bandpass filters produced by ion-assisted deposition", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); https://doi.org/10.1117/12.192086
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Cited by 3 scholarly publications.
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KEYWORDS
Refractive index

Avalanche photodetectors

Temperature metrology

Glasses

Bandpass filters

Distortion

Thin films

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