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Using the chemically amplified negative resist SAL-601TM (Shipley Microelectronics LTD) and iterative dry etching, we improved the CD yield of 64 Mbit-DRAM (0.35 micrometers design rule) reticles. SAL-601 features high contrast and high resolution, and iterative etching is a superior method in a dry etching process. To perform iterative dry etching with SAL-601, we needed a more vertical resist profile to measure a chromium pattern under the resist correctly. We had to also prevent deterioration of the resist sensitivity. This paper describes how these problems were solved.
Masahiro Uraguchi,Hideaki Hasegawa,Yuhichi Yamamoto,Hideyuki Kanemitsu,Eiichi Hoshino, andAkira Morishige
"New method of critical dimension (CD) control for 64-Mbit-DRAM reticles", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191946
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Masahiro Uraguchi, Hideaki Hasegawa, Yuhichi Yamamoto, Hideyuki Kanemitsu, Eiichi Hoshino, Akira Morishige, "New method of CD control for 64 Mbit-DRAM reticles," Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191946