Reactively sputtered thermochromic tungsten doped VO2 films

M. Abdus Sobhan; R. T. Kivaisi; B. A. Stjerna; Claes-Goeran Granqvist

doi:10.1117/12.185385

9 September 1994 Reactively sputtered thermochromic tungsten-doped VO₂ films

M. Abdus Sobhan, R. T. Kivaisi, B. A. Stjerna, Claes-Goeran Granqvist

Proceedings Volume 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII; (1994) https://doi.org/10.1117/12.185385
Event: Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, 1994, Freiburg, Germany

Abstract

Tungsten-doped vanadium oxide (V_1-xW_xO₂) films were prepared by concurrent reactive dc magnetron sputtering of vanadium and tungsten in an Ar + O₂ plasma with a controlled oxygen partial pressure. Films were deposited onto glass substrates at 400 degree(s)C. The films had a metal-semiconductor transition at a temperature (tau) _t that was depressed when x was increased. Rutherford Back Scattering was used to determine x. X- ray diffraction was employed to confirm the monoclinic low-temperature VO₂ phase. The relation between x and (tau) _t was studied and compared with results from the literature. It was shown that (tau) _t could be set to a value between 17 and 65 degree(s)C by proper choice of x. The optical and electrical properties of the films were investigated around the metal-semiconductor phase transition. The luminous transmittance was rather unaffected by the temperature, whereas the near infrared transmittance showed lower values above (tau) _t. The degree of thermochromic modulation decreased for increased x. Electrical measurements showed that the ratio of the resistance above and below (tau) _t decreased with increasing x.

Citation Download Citation

M. Abdus Sobhan, R. T. Kivaisi, B. A. Stjerna, and Claes-Goeran Granqvist "Reactively sputtered thermochromic tungsten-doped VO₂ films", Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); https://doi.org/10.1117/12.185385

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